Title :
Comparison of RF performance of vertical and lateral DMOSFET
Author :
Trivedi, Malay ; Shenai, Krishna
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Abstract :
Despite the increasing popularity of Si MOSFETs in RF applications, detailed physical understanding has yet to be developed with regard to the relative RF performance of VDMOSFETs and LDMOSFETs. In this paper, a critical comparison is made between the performance of VDMOSFETs and LDMOSFETs developed for RF power applications. Device performance is investigated using experimental characterization and numerical simulation. It is shown that LDMOSFETs have better RF performance than VDMOS due to structural differences between the two devices
Keywords :
UHF field effect transistors; numerical analysis; power MOSFET; semiconductor device models; semiconductor device testing; LDMOSFETs; RF applications; RF performance; RF power applications; Si MOSFETs; VDMOSFETs; device performance; lateral DMOSFET; numerical simulation; structural differences; vertical DMOSFET; Capacitance measurement; Circuit simulation; Design optimization; Geometry; Packaging; Radio frequency; Scattering parameters; Solid modeling; Transconductance; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764109
