Title :
High voltage high frequency silicon bipolar transistors
Author :
Gradinaru, D. ; Ng, W.T. ; Salama, C.A.T.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
In this paper, a novel design concept for a high voltage RF silicon BJT structure is introduced. Closely spaced p+ base contact diffusions are used to guard the thin base region, allowing independent tailoring of the breakdown voltage and high frequency performance
Keywords :
diffusion; elemental semiconductors; microwave bipolar transistors; power bipolar transistors; semiconductor device breakdown; semiconductor device measurement; silicon; Si; breakdown voltage; design concept; high frequency performance; high voltage RF silicon BJT structure; high voltage high frequency silicon bipolar transistors; p+ base contact diffusions; thin base region; Bipolar transistors; Breakdown voltage; Contacts; Design engineering; Doping; Electric breakdown; Fingers; Medical simulation; Radio frequency; Silicon;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764120
