Title :
Submicron silicon carbide CMOS for smartpower applications
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
This paper describes the development of silicon carbide (SiC) submicron CMOS technology for smart power applications. NMOS transistors are fabricated with 0.5 μm (drawn) channel lengths while PMOS transistors exhibit punchthrough at 0.8 μm channel lengths. Digital logic circuits are also fabricated and exhibit nanosecond switching performance. Finally, performance limiting factors such as parasitic series resistance are also investigated
Keywords :
CMOS integrated circuits; CMOS logic circuits; MOSFET; electric resistance; power integrated circuits; silicon compounds; wide band gap semiconductors; 0.5 micron; 0.8 micron; NMOS transistors; PMOS transistors; SiC; SiC CMOS technology; channel length; digital logic circuits; parasitic series resistance; performance limiting factors; punchthrough; silicon carbide CMOS; smart power applications; switching performance; Capacitance; Circuits; Implants; Inverters; MOS devices; MOSFETs; Ring oscillators; Silicon carbide; Threshold voltage; Transconductance;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764121
