Submicron silicon carbide CMOS for smartpower applications

Author

Kornegay, K.T.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

fYear

1999

fDate

1999

Firstpage

297

Lastpage

300

Abstract

This paper describes the development of silicon carbide (SiC) submicron CMOS technology for smart power applications. NMOS transistors are fabricated with 0.5 μm (drawn) channel lengths while PMOS transistors exhibit punchthrough at 0.8 μm channel lengths. Digital logic circuits are also fabricated and exhibit nanosecond switching performance. Finally, performance limiting factors such as parasitic series resistance are also investigated

Keywords

CMOS integrated circuits; CMOS logic circuits; MOSFET; electric resistance; power integrated circuits; silicon compounds; wide band gap semiconductors; 0.5 micron; 0.8 micron; NMOS transistors; PMOS transistors; SiC; SiC CMOS technology; channel length; digital logic circuits; parasitic series resistance; performance limiting factors; punchthrough; silicon carbide CMOS; smart power applications; switching performance; Capacitance; Circuits; Implants; Inverters; MOS devices; MOSFETs; Ring oscillators; Silicon carbide; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764121

Filename

764121

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2794149