DocumentCode :
2794149
Title :
Submicron silicon carbide CMOS for smartpower applications
Author :
Kornegay, K.T.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
fYear :
1999
fDate :
1999
Firstpage :
297
Lastpage :
300
Abstract :
This paper describes the development of silicon carbide (SiC) submicron CMOS technology for smart power applications. NMOS transistors are fabricated with 0.5 μm (drawn) channel lengths while PMOS transistors exhibit punchthrough at 0.8 μm channel lengths. Digital logic circuits are also fabricated and exhibit nanosecond switching performance. Finally, performance limiting factors such as parasitic series resistance are also investigated
Keywords :
CMOS integrated circuits; CMOS logic circuits; MOSFET; electric resistance; power integrated circuits; silicon compounds; wide band gap semiconductors; 0.5 micron; 0.8 micron; NMOS transistors; PMOS transistors; SiC; SiC CMOS technology; channel length; digital logic circuits; parasitic series resistance; performance limiting factors; punchthrough; silicon carbide CMOS; smart power applications; switching performance; Capacitance; Circuits; Implants; Inverters; MOS devices; MOSFETs; Ring oscillators; Silicon carbide; Threshold voltage; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
ISSN :
1063-6854
Print_ISBN :
0-7803-5290-4
Type :
conf
DOI :
10.1109/ISPSD.1999.764121
Filename :
764121
Link To Document :
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