Title :
Characterization of Silicided Polysilicon Fuse Implemented in 65nm Logic CMOS Technology
Author :
Im, Jay ; Ang, Boon ; Tumakha, Sergey ; Paak, Sunhom
Author_Institution :
Technol. Dev., Xilinx Inc., San Jose, CA
Abstract :
NiSi electrically programmable fuses (eFUSE) were fabricated and investigated using 65 nm logic CMOS technology. The optimization of fuse program was achieved by analyzing electrical and physical responses of fuse bits for various conditions. Controlled electromigration of Ni during fuse program was identified as a key factor in achieving reliably high post-program fuse resistance.
Keywords :
CMOS logic circuits; CMOS memory circuits; electromigration; integrated circuit reliability; nickel compounds; scanning electron microscopy; NiSi; SEM; eFUSE; electrical responses; electrically programmable fuses fabrication; electromigration; fuse program optimization; logic CMOS technology; physical responses; reliable high post-program fuse resistance; silicided polysilicon fuse characterization; size 65 nm; Application specific integrated circuits; CMOS logic circuits; CMOS technology; Circuit testing; Electromigration; Fuses; Geometry; Logic devices; Silicides; Temperature; CMOS logic; NVM; NiSi; OTP; eFUSE; electromigration; poly fuse;
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2006. NVMTS 2006. 7th Annual
Conference_Location :
San Mateo, CA
Print_ISBN :
0-7803-9738-X
DOI :
10.1109/NVMT.2006.378877
