DocumentCode :
2794167
Title :
Ultra-low Rdson 12 V P-channel trench MOSFET
Author :
Kinzer, D. ; Asselanis, D. ; Carta, R.
Author_Institution :
Int. Rectifier Corp., El Segundo, CA, USA
fYear :
1999
fDate :
1999
Firstpage :
303
Lastpage :
306
Abstract :
This paper describes a high density trench P-channel MOSFET for portable applications. These FETs are required to have extremely low R dson with gate drives limited by single cell Li-ion battery voltage as low as 2.5 V. This 12 V FET in an SO8 package measures only 5 mΩ at 4.5 Vgs, and 7 mΩ at 2.5 Vgs. Eliminating package and top metal resistance, this corresponds to a specific Rdson of 21.6 and 37.0 mΩ-mm2, respectively. Typical applications for these devices include battery charging and load switching in cell phones and laptops
Keywords :
electric resistance; isolation technology; power MOSFET; semiconductor device metallisation; semiconductor device packaging; 12 V; 2.5 V; 45 V; 5 mohm; 7 mohm; Li; P-channel trench MOSFET; SO8 package; battery charging; cell phones; drain-source on-resistance; gate drives; high density trench P-channel MOSFET; laptops; load switching; package resistance; portable applications; single cell Li-ion battery voltage; specific on-resistance; top metal resistance; Batteries; Conductivity; Doping; Etching; FETs; Immune system; Low voltage; MOSFET circuits; Semiconductor device packaging; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
ISSN :
1063-6854
Print_ISBN :
0-7803-5290-4
Type :
conf
DOI :
10.1109/ISPSD.1999.764122
Filename :
764122
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2794167
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