Title :
Integrated Analysis and Design of Phase-Change Random Access Memory (PCRAM) Cells
Author :
Li, J.M. ; Shi, L.P. ; Yang, H.X. ; Lim, K.G. ; Miao, X.S. ; Lee, H.K. ; Chong, T.C.
Author_Institution :
Data Storage Inst., Singapore
Abstract :
An integrated software for analysis and design of PCRAM cells has been developed. The research focuses on the discussion on electric-thermal -mechanical analyses. The software involves in the materials, geometrical and layer structure design and electric pulse strategy. It aims to provide a powerful tool for structure optimization and failure analysis of PCRAM cells.
Keywords :
CMOS memory circuits; chalcogenide glasses; circuit CAD; failure analysis; integrated circuit design; phase change materials; random-access storage; CMOS technology; PCRAM cells design; chalcogenide materials; electric pulse strategy; electric-thermal-mechanical analysis; failure analysis; geometrical design; integrated software developement; layer structure design; nonvolatile memory; phase-change random access memory cells; structure optimization; Amorphous materials; Crystallization; Failure analysis; Finite element methods; Kinetic theory; Nonvolatile memory; Phase change random access memory; Resistance heating; Software tools; Voltage; PCRAM cells; design; electric-thermal-mechanical analysis; phase-change; software;
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2006. NVMTS 2006. 7th Annual
Conference_Location :
San Mateo, CA
Print_ISBN :
0-7803-9738-X
DOI :
10.1109/NVMT.2006.378880
