Integrated Analysis and Design of Phase-Change Random Access Memory (PCRAM) Cells

Author

Li, J.M. ; Shi, L.P. ; Yang, H.X. ; Lim, K.G. ; Miao, X.S. ; Lee, H.K. ; Chong, T.C.

Author_Institution

Data Storage Inst., Singapore

fYear

2006

fDate

5-8 Nov. 2006

Firstpage

71

Lastpage

75

Abstract

An integrated software for analysis and design of PCRAM cells has been developed. The research focuses on the discussion on electric-thermal -mechanical analyses. The software involves in the materials, geometrical and layer structure design and electric pulse strategy. It aims to provide a powerful tool for structure optimization and failure analysis of PCRAM cells.

Keywords

CMOS memory circuits; chalcogenide glasses; circuit CAD; failure analysis; integrated circuit design; phase change materials; random-access storage; CMOS technology; PCRAM cells design; chalcogenide materials; electric pulse strategy; electric-thermal-mechanical analysis; failure analysis; geometrical design; integrated software developement; layer structure design; nonvolatile memory; phase-change random access memory cells; structure optimization; Amorphous materials; Crystallization; Failure analysis; Finite element methods; Kinetic theory; Nonvolatile memory; Phase change random access memory; Resistance heating; Software tools; Voltage; PCRAM cells; design; electric-thermal-mechanical analysis; phase-change; software;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium, 2006. NVMTS 2006. 7th Annual

Conference_Location

San Mateo, CA

Print_ISBN

0-7803-9738-X

Type

conf

DOI

10.1109/NVMT.2006.378880

Filename

4228439