Title :
Improvement in lateral IGBT design for 500 V 3 A one chip inverter ICs
Author :
Nakagawa, Akio ; Funaki, Hideyuki ; Yamaguchi, Yoshihiro ; Suzuki, Fumito
Author_Institution :
Toshiba Adv. Semicond. Devices Labs., Kawasaki, Japan
Abstract :
This paper reports, for the first time, the development of 500 V, 3 A single chip inverter ICs. The chip size of the IC is 7.1×5.2 mm2, which is only 30% larger than that of 500 A, 1 A inverter ICs. The chip size reduction has been realized by 35% improvement in lateral IGBT on-resistance and an optimized layout of LIGBT unit cells and bonding pads
Keywords :
circuit optimisation; electric resistance; insulated gate bipolar transistors; integrated circuit layout; invertors; power bipolar transistors; power integrated circuits; 1 A; 3 A; 5.2 mm; 500 V; 7.1 mm; LIGBT unit cells; bonding pads; chip size; chip size reduction; inverter ICs; lateral IGBT design; lateral IGBT on-resistance; optimized layout; single chip inverter ICs; Aluminum; Bonding; Boron; Conductors; DC motors; Diodes; Implants; Insulated gate bipolar transistors; Inverters; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764125
