Title :
600 V power conversion system-on-a-chip based on thin layer silicon-on-insulator
Author :
Letavic, T. ; Simpson, M. ; Arnold, E. ; Peters, E. ; Aquino, R. ; Curcio, J. ; Herko, S. ; Mukherjee, S.
Author_Institution :
Philips Res., Philips Electron. North America Corp., Briarcliff Manor, NY, USA
Abstract :
An integrated 600 V power conversion system is described based on smart power technology which combines novel lateral high-voltage RESURF transistor structures and a merged bipolar/CMOS/DMOS process flow on thin-layer SOI substrates. A new high-voltage SOI LDMOS device structure is presented which results in a factor-of-two decrease in specific on-resistance and a factor-of-two improvement in source-follower saturated current, thus overcoming a key limitation of integrated thin-layer technology. This opens new application areas for thin-layer SOI, such as lighting electronics, power modules, motor control, and others, a significant development for the integration of power conversion systems
Keywords :
BIMOS integrated circuits; electric current; electric resistance; integrated circuit design; power MOSFET; power convertors; power integrated circuits; semiconductor thin films; silicon-on-insulator; 600 V; Si-SiO2; high-voltage SOI LDMOS device structure; integrated power conversion system; integrated thin-layer technology; lateral high-voltage RESURF transistor structures; lighting electronics; merged bipolar/CMOS/DMOS process flow; motor control; power conversion system integration; power conversion system-on-a-chip; power modules; smart power technology; source-follower saturated current; specific on-resistance; thin layer silicon-on-insulator; thin-layer SOI applications; thin-layer SOI substrates; CMOS process; CMOS technology; Integrated circuit technology; Multichip modules; North America; Power conversion; Power integrated circuits; Silicon on insulator technology; System-on-a-chip; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764126
