Title :
Thermal- and radiation-induced interface traps in MOS devices
Author :
Sogoyan, A.V. ; Cherepko, S.V. ; Pershenkov, V.S. ; Rogov, V.I. ; Ulimov, V.N. ; Emelianov, V.V.
Author_Institution :
Specialized Electron. Syst., Moscow, Russia
Abstract :
The interface trap build-up mechanisms during post-irradiation thermal annealing and radiation-induced charge neutralisation (RICN) are experimentally investigated. The role of substrate electrons is shown to be significant in post-irradiation interface trap build-up. The RICN is found to be incapable to replace a standard thermal annealing test in terms of conservative low dose rate response estimation
Keywords :
MOSFET; X-ray effects; annealing; interface states; MOSFET; interface trap build-up; low dose rate response; post-irradiation thermal annealing; radiation-induced charge neutralisation; substrate electrons; Annealing; Electron traps; Hydrogen; Instruments; Laboratories; MOS devices; Physics; Space charge; Space heating; Testing;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location :
Cannes
Print_ISBN :
0-7803-4071-X
DOI :
10.1109/RADECS.1997.698848
