Title :
Snapback by Hot Filament
Author :
Yeh, Jyi-Tyan ; Chen, Fred ; Chao, Der-Sheng ; Wang, Wen-Han ; Chen, Yi-Chan ; Lee, Chain-Ming ; Tsai, Ming-Jinn ; Kao, Ming-Jer
Author_Institution :
Ind. Technol. Res. Inst., Hsinchu
Abstract :
A simulation procedure using the conventional thermal-electric finite element method for the phase change memory has been developed. By introducing a defect on the amorphous chalcogenide of a reset phase change memory, the snapback by hot filament due to thermal runaway has been investigated by the numerical simulations with three-dimensional model.
Keywords :
chalcogenide glasses; finite element analysis; integrated memory circuits; phase change materials; thermoelectricity; amorphous chalcogenide; hot filament; phase change memory; thermal runaway; thermal-electric finite element method; three-dimensional model; Amorphous materials; Electric resistance; Electrodes; Finite element methods; Numerical simulation; Phase change materials; Phase change memory; Temperature dependence; Thermal conductivity; Voltage; hot filament; numerical simulation; phase change memory; snapback; thermal runaway;
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2006. NVMTS 2006. 7th Annual
Conference_Location :
San Mateo, CA
Print_ISBN :
0-7803-9738-X
DOI :
10.1109/NVMT.2006.378883
