Dynamic characteristics of high voltage 4H-SiC vertical JFETs

Author

Mitlehner, Heinz ; Bartsch, Wolfgang ; Dohnke, Karl Otto ; Friedrichs, Peter ; Kaltschmidt, Rainer ; Weinert, Ulrich ; Weis, Benno ; Stephani, Dietrich

Author_Institution

Corp. Res. & Dev., Siemens AG, Erlangen, Germany

fYear

1999

fDate

1999

Firstpage

339

Lastpage

342

Abstract

We have developed a novel structure for a fully implanted, normally-on vertical junction field effect transistor (VJFET) and fabricated prototypes with blocking voltages between 600 and 1000 V. Mounting the SiC VJFET together with a 50 V Si MOSFET on a DCB substrate in a cascode circuit, we obtain a normally-off high voltage switch. The specific on-resistance of the VJFET was sufficiently low, in the range of 18 to 40 mΩcm², for various blocking voltages. The dynamic behaviour shows turn-off times between 50 ns and 2 μs due to the RC-product of two different p-gate networks

Keywords

electric resistance; junction gate field effect transistors; power MOSFET; power field effect transistors; power semiconductor switches; silicon compounds; wide band gap semiconductors; 50 V; 50 ns to 2 mus; 600 to 1000 V; DCB substrate; RC-product; Si; Si MOSFET; SiC; SiC VJFET mounting; VJFET; blocking voltages; cascode circuit; dynamic characteristics; fully implanted normally-on vertical junction field effect transistor; high voltage 4H-SiC vertical JFETs; normally-off high voltage switch; p-gate networks; specific on-resistance; turn-off time; vertical junction field effect transistor; Breakdown voltage; Electric breakdown; JFETs; MOSFET circuits; Power MOSFET; Prototypes; Silicon carbide; Substrates; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764129

Filename

764129