Experimental demonstration of 600 V MCCT

Author

Iwaana, Tadayoshi ; Iwamuro, Noriyuki ; Harada, Yuichi ; Seki, Yoshiaki

Author_Institution

Adv. Device Technol. Lab., Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan

fYear

1999

fDate

1999

Firstpage

343

Lastpage

346

Abstract

This paper presents the characteristics of a MCCT (MOS controlled cascode thyristor) device with a blocking capability of 600 V for the first time. It should be noted that a superior on-state voltage drop of 2.0 V can be achieved while exhibiting a fast turn-off speed which is comparable to that of an IGBT. Furthermore, the MCCT shows a superior short circuit withstand capability of more than 16 μs and a maximum turn-off capability of over 660 A/cm2 at a high temperature condition of 125°C, simultaneously, by the application of an n/n⁺ source region structure

Keywords

MOS-controlled thyristors; semiconductor device testing; 125 C; 16 mus; 2 V; 600 V; MCCT; MOS controlled cascode thyristor; blocking capability; high temperature condition; maximum turn-off capability; n/n⁺ source region structure; on-state voltage drop; short circuit withstand capability; turn-off speed; Cathodes; Electrons; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Research and development; Temperature; Threshold voltage; Thyristors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764130

Filename

764130