Monolithically integrated power device consisting of a GAT and a MPS diode with increased switching speed

Author

Cheng, Xu ; Kang, Baowei ; Sin, Johnny K O ; Wang, Zhe ; Li, GuoZhong ; Wu, Yu

Author_Institution

Dept. of Electron. Eng., Beijing Polytech. Univ., China

fYear

1999

fDate

1999

Firstpage

347

Lastpage

350

Abstract

A new integrated power device structure, which puts together a gate associated transistor (GAT) and a merged pin Schottky (MPS) diode, is proposed. It is verified by simulations and experiments that the new structure has gained both the faster recovery speed of the diode and the faster switching speed of the transistor compared to that of the conventional structure consisting of a traditional power bipolar junction transistor (BJT) and a p-i-n diode. The new structure can be realized in an ordinary planar process, and the fast switching speed can be achieved at low cost without the need for special carrier-lifetime-controlling techniques such as Pt doping

Keywords

Schottky diodes; power bipolar transistors; power semiconductor diodes; power semiconductor switches; semiconductor device models; semiconductor device testing; GAT; MPS diode; Pt doping; carrier-lifetime-controlling techniques; diode recovery speed; gate associated transistor; integrated power device structure; merged pin Schottky diode; monolithically integrated power device; p-i-n diode; planar process; power BJT; power bipolar junction transistor; simulation; switching speed; transistor switching speed; Costs; Equivalent circuits; Low voltage; PROM; Power engineering and energy; Power semiconductor switches; Production; Schottky diodes; Semiconductor diodes; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764131

Filename

764131