Title :
New design approach for ultra high power GCT thyristor
Author :
Satoh, K. ; Morishita, K. ; Hirano, N. ; Yamamoto, M. ; Kawakami, A.
Author_Institution :
Fkuryou Semicon Eng. Corp., Fukuoka City, Japan
Abstract :
Turn-off capability is a major concern when designing ultra high power, large size GCTs (gate commutated turn-off thyristors). Unlike small size GCTs, which have a high turn-off capability, conventional large size GCTs have a low turn-off capability that is not proportionate to its high power. With the help of computer simulation and test sample evaluation, we developed a new design approach for ultra high power GCTs with improved turn-off capability. Turn-off simulation suggested that the low turn-off capability of large size GCTs is related to the nonuniformity in the GCT chip design. Optimizing the GCT chip uniformity following our new design approach resulted in large size GCTs with higher turn-off capability when compared with the conventional approach
Keywords :
design engineering; optimisation; semiconductor device models; semiconductor device testing; thyristors; GCT chip design; GCT chip design nonuniformity; GCT chip uniformity optimization; computer simulation; design; gate commutated turn-off thyristors; test sample evaluation; turn-off capability; turn-off simulation; ultra high power GCT thyristor; ultra high power GCTs; ultra high power large size GCTs; Cathodes; Charge carrier density; Doping profiles; Electrodes; Inverters; Medical simulation; Power dissipation; Power electronics; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764132
