• DocumentCode
    2794586
  • Title

    High-Reliability Self-Aligned InGaP/GaAs HBTs for Lightwave Communications

  • Author

    Fujii, T. ; Takahashi, T. ; Sasa, S. ; Kawano, A. ; lwai, T.

  • Author_Institution
    Fujitsu Laboratories Ltd., Japan
  • fYear
    1995
  • fDate
    7-9 Aug. 1995
  • Firstpage
    39
  • Lastpage
    40
  • Keywords
    Carbon dioxide; Degradation; Gallium arsenide; Heterojunction bipolar transistors; High speed integrated circuits; Laboratories; Space charge; Spontaneous emission; Stress; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Flat Panel Display Technology/Technologies for a Global Information Infrastructure/ICs for New Age Lightwave Communications/RF Optoelectronics, 1995 Digest of the LEOS Summer Topical Meetings
  • Conference_Location
    Keystone, CO, USA
  • Print_ISBN
    0-7803-2448-X
  • Type

    conf

  • DOI
    10.1109/LEOSST.1995.764152
  • Filename
    764152
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2794586