Title :
Design of high-temperature SiC three-phase AC-DC converter for >100°C ambient temperature
Author :
Wang, Ruxi ; Ning, Puqi ; Boroyevich, Dushan ; Danilovic, Milisav ; Wang, Fred ; Kaushik, Rajashekara
Author_Institution :
Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
High temperature (HT) converters have become more and more important in industrial applications where the converters will operate in a harsh environment. These environments require the converter to have not only high-temperature semiconductor devices (SiC, GaN) but also high-temperature control electronics. This paper describes a design process for a three-phase PWM rectifier. The SiC JFET planar structure is used for the main semiconductor devices. Other high-temperature components, including the passive components, silicon-on-insulator chips and the auxiliary components are studied and summarized. Finally, a 1.4 kW lab prototype is fabricated and tested for verification.
Keywords :
AC-DC power convertors; PWM rectifiers; high-temperature electronics; junction gate field effect transistors; silicon compounds; silicon-on-insulator; wide band gap semiconductors; JFET; high temperature converters; high-temperature control electronics; high-temperature semiconductor devices; high-temperature three-phase AC-DC converter; passive components; power 1.4 kW; silicon-on-insulator chips; three-phase PWM rectifier; JFETs; Logic gates; Multichip modules; Silicon carbide; Silicon on insulator technology; Temperature sensors; Voltage control; High Temperature Converter; Silicon Carbide JFET; Silicon On Insulator Technology;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2010 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-5286-6
Electronic_ISBN :
978-1-4244-5287-3
DOI :
10.1109/ECCE.2010.5617813
