Tunable GaAs-based high power tapered amplifiers in an external cavity setup

Author

Schilling, Christian ; Ostendorf, Ralf ; Kaufel, Gudrun ; Moritz, Rudolf ; Wagner, Joachim ; Ambacher, O.

Author_Institution

Fraunhofer Inst. fur Angewandte Festkorperphys., Freiburg, Germany

fYear

2009

fDate

14-19 June 2009

Firstpage

1

Lastpage

1

Abstract

In this paper, we report on tapered amplifiers based on the GaInAs/AlGaAs-on-GaAs material system, where the active region consists of a 7 nm thick compressively strained InGaAs single quantum well with an indium content of 31%. The devices comprise an index-guided ridge waveguide section acting as a master oscillator which feeds a gain-guided tapered section. A novel split contact design enables us to separately adjust the currents in the ridge- and the taper section. Therefore, a modulation of the output power can be realized by varying the comparatively small ridge current only.

Keywords

III-V semiconductors; aluminium compounds; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser tuning; quantum well lasers; ridge waveguides; waveguide lasers; GaAs; GaInAs-AlGaAs-GaAs; compressively strained material; external cavity setup; gain-guided tapered section; high-power tunable tapered amplifier; index-guided ridge waveguide section; optical modulation; quantum well material system; size 7 nm; split contact design; High power amplifiers; Optical amplifiers; Optical coupling; Optical diffraction; Power amplifiers; Power generation; Power lasers; Pump lasers; Semiconductor lasers; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-4079-5

Electronic_ISBN

978-1-4244-4080-1

Type

conf

DOI

10.1109/CLEOE-EQEC.2009.5192572

Filename

5192572