DocumentCode
2795440
Title
Resonant energy transfer due to exciton-exciton interaction in the strong coupling regime in Hybrid InGaN Quantum Wells
Author
Li, Jianyou ; Neogi, Arup ; Ishihara, Teruya ; Tackeuchi, Atsushi
Author_Institution
Department of Physics, University of North Texas, Denton, 76201, USA
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
Resonant coupling of excitons in strongly confined hybrid perovskite conjugated to InGaN quantum wells is observed. Temperature and time-resolved-photoluminescence (PL) reveal 10 times enhancement of recombination lifetime in strong-coupling regime due to resonant energy transfer.
Keywords
Energy exchange; Excitons; Gallium nitride; Light emitting diodes; Luminescence; Optical films; Physics; Resonance; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location
Baltimore, MD, USA
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/QELS.2007.4431823
Filename
4431823
Link To Document