DocumentCode
2795559
Title
The mechanism of dual schottky magnetodiode
Author
Phetchakul, T. ; Luanatikomkul, W. ; Yamwong, W. ; Poyai, A.
Author_Institution
Dept. of Electron., King Mongkut´´s Inst. of Technol. Ladkrabang, Bangkok, Thailand
fYear
2012
fDate
16-18 May 2012
Firstpage
1
Lastpage
4
Abstract
This paper presents the mechanism of dual schottky magnetodiode. The device can operate both in forward and reverse biasing for magnetic field sensor. Two modes of operation show linearity which electron is only type of carrier. In forward bias, the deflected electrons in n-type semiconductor cathode are injected to metal anode. In reverse bias, the electrons from metal anode are injected and continuously deflected in n-type semiconductor cathode. Comparison of two modes at the same current shows the same sensitivity.
Keywords
Schottky diodes; magnetic field measurement; magnetic sensors; dual-schottky magnetodiode mechanism; forward biasing; magnetic field sensor; metal anode; n-type semiconductor cathode; reverse biasing; Cathodes; Magnetic separation; Magnetic tunneling; Magnetometers; Magnetostriction; Superconducting magnets; Magnetodiode; Schottky Junction; Sentaurus TCAD;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2012 9th International Conference on
Conference_Location
Phetchaburi
Print_ISBN
978-1-4673-2026-9
Type
conf
DOI
10.1109/ECTICon.2012.6254188
Filename
6254188
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