The new design for magnetoresistance effect on Hall plate structure

Author

Phetchakul, T. ; Taisettavatkul, P. ; Pengchan, W. ; Yamwong, W. ; Poyai, A.

Author_Institution

Dept. of Electron. Eng., King Mongkut´´s Inst. of Technol. Ladkrabang, Bangkok, Thailand

fYear

2012

fDate

16-18 May 2012

Firstpage

1

Lastpage

4

Abstract

This paper presents the new design which contributes to magnetoresistance effect on Hall plate by compared with series resistance structure by Sentaurus TCAD program. A new design creates zero Hall voltage area which the carriers move and deflect freely. The Hall plate structure is n-type silicon with 400 μm length, 100 μm width and 1 μm thickness. Both designs have percentage of magnetoresistance effect about 20% at doping concentration 2×10¹⁵cm^-3, temperature 300K at magnetic field 3 Tesla. A new design on Hall plate structure is easier than the classical series resistance and has no effect of metal space which is in series resistance structure.

Keywords

Hall effect devices; elemental semiconductors; magnetoresistance; plates (structures); silicon; Hall plate structure; Sentaurus TCAD program; Si; doping concentration; magnetic field; magnetic flux density 3 tesla; magnetoresistance effect; metal space; series resistance structure; size 1 mum; size 100 mum; size 400 mum; temperature 300 K; zero Hall voltage area; Aluminum; Lorentz covariance; Magnetic fields; Magnetoresistance; Resistance; Silicon; Hall plate; Magnetoresistance effect; TCAD;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2012 9th International Conference on

Conference_Location

Phetchaburi

Print_ISBN

978-1-4673-2026-9

Type

conf

DOI

10.1109/ECTICon.2012.6254189

Filename

6254189