Title :
Irradiation effects in ultrathin Si/SiO2 structures
Author :
Cantin, J.L. ; von Bardeleben, H.J. ; Autran, J.L.
Author_Institution :
Groupe de Phys. des Solides, Paris VI Univ., France
Abstract :
The total dose response of Si/SiO2 structures with ultrathin (20-40 Å) thermal oxide layers grown on porous silicon substrates has been studied by Electron Paramagnetic Resonance (EPR) spectroscopy. The modification of the interface defect passivation and the generation of oxide defects have been analysed as a function of dose for three series of samples with different initial hydrogen passivation states
Keywords :
X-ray effects; elemental semiconductors; paramagnetic resonance; passivation; porous semiconductors; semiconductor-insulator boundaries; silicon; silicon compounds; EPR spectroscopy; Si-SiO2; X-ray irradiation; hydrogen passivation; interface defect passivation; oxide defect generation; porous silicon substrate; total dose response; ultrathin thermal oxide layer; Electric variables; Electric variables measurement; Electrons; Hydrogen; Paramagnetic materials; Paramagnetic resonance; Particle measurements; Passivation; Silicon; Spectroscopy;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location :
Cannes
Print_ISBN :
0-7803-4071-X
DOI :
10.1109/RADECS.1997.698859
