• DocumentCode
    2796006
  • Title

    Irradiation effects in ultrathin Si/SiO2 structures

  • Author

    Cantin, J.L. ; von Bardeleben, H.J. ; Autran, J.L.

  • Author_Institution
    Groupe de Phys. des Solides, Paris VI Univ., France
  • fYear
    1997
  • fDate
    15-19 Sep 1997
  • Firstpage
    97
  • Lastpage
    101
  • Abstract
    The total dose response of Si/SiO2 structures with ultrathin (20-40 Å) thermal oxide layers grown on porous silicon substrates has been studied by Electron Paramagnetic Resonance (EPR) spectroscopy. The modification of the interface defect passivation and the generation of oxide defects have been analysed as a function of dose for three series of samples with different initial hydrogen passivation states
  • Keywords
    X-ray effects; elemental semiconductors; paramagnetic resonance; passivation; porous semiconductors; semiconductor-insulator boundaries; silicon; silicon compounds; EPR spectroscopy; Si-SiO2; X-ray irradiation; hydrogen passivation; interface defect passivation; oxide defect generation; porous silicon substrate; total dose response; ultrathin thermal oxide layer; Electric variables; Electric variables measurement; Electrons; Hydrogen; Paramagnetic materials; Paramagnetic resonance; Particle measurements; Passivation; Silicon; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
  • Conference_Location
    Cannes
  • Print_ISBN
    0-7803-4071-X
  • Type

    conf

  • DOI
    10.1109/RADECS.1997.698859
  • Filename
    698859
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2796006