DocumentCode :
2796279
Title :
Photoluminescence lifetime in silica glasses excited by vacuum ultra violet laser irradiation
Author :
Nishikawa, Hiroyuki ; Nakamura, Ryuta ; Nagasawa, Kaya ; Ohki, Yoshimichi ; Hama, Yoshimasa
Author_Institution :
Dept. of Electr. Eng., Waseda Univ., Tokyo, Japan
fYear :
1991
fDate :
8-12 Jul 1991
Firstpage :
1032
Abstract :
Photoluminescence bands in silica glasses excited by a VUV (vacuum ultraviolet) laser (7.9 eV) are reported. Luminescence spectra of various types of silicas, prepared under different conditions, exhibit sample-to-sample variations. Several luminescence bands (1.9-eV, 2.7-eV, 3.1-eV, 4.2-eV, 4.3-eV, and 2-4-eV bands) were observed at room temperature. The 2.7-eV band, previously ascribed to a triplet-to-singlet transition of neutral oxygen vacancy, shows a slow decay rate of τ≃10 ms. Relatively slow decay rates of τ≃15 μs and τ≃110 μs were obtained for the 1.9- and 3.1-eV bands, respectively
Keywords :
glass; luminescence of inorganic solids; photoluminescence; silicon compounds; 1.9 to 4.3 eV; 15 to 10000 mus; 7.9 eV; SiO2 glasses; VUV; decay rate; luminescence bands; sample-to-sample variations; vacuum ultraviolet laser irradiation; Fiber lasers; Glass; Impurities; Laser excitation; Luminescence; Photoluminescence; Photonic band gap; Plasma temperature; Silicon compounds; Solid lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Properties and Applications of Dielectric Materials, 1991., Proceedings of the 3rd International Conference on
Conference_Location :
Tokyo
Print_ISBN :
0-87942-568-7
Type :
conf
DOI :
10.1109/ICPADM.1991.172250
Filename :
172250
Link To Document :
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