Photoluminescence lifetime in silica glasses excited by vacuum ultra violet laser irradiation

Author

Nishikawa, Hiroyuki ; Nakamura, Ryuta ; Nagasawa, Kaya ; Ohki, Yoshimichi ; Hama, Yoshimasa

Author_Institution

Dept. of Electr. Eng., Waseda Univ., Tokyo, Japan

fYear

1991

fDate

8-12 Jul 1991

Firstpage

1032

Abstract

Photoluminescence bands in silica glasses excited by a VUV (vacuum ultraviolet) laser (7.9 eV) are reported. Luminescence spectra of various types of silicas, prepared under different conditions, exhibit sample-to-sample variations. Several luminescence bands (1.9-eV, 2.7-eV, 3.1-eV, 4.2-eV, 4.3-eV, and 2-4-eV bands) were observed at room temperature. The 2.7-eV band, previously ascribed to a triplet-to-singlet transition of neutral oxygen vacancy, shows a slow decay rate of τ≃10 ms. Relatively slow decay rates of τ≃15 μs and τ≃110 μs were obtained for the 1.9- and 3.1-eV bands, respectively

Keywords

glass; luminescence of inorganic solids; photoluminescence; silicon compounds; 1.9 to 4.3 eV; 15 to 10000 mus; 7.9 eV; SiO₂ glasses; VUV; decay rate; luminescence bands; sample-to-sample variations; vacuum ultraviolet laser irradiation; Fiber lasers; Glass; Impurities; Laser excitation; Luminescence; Photoluminescence; Photonic band gap; Plasma temperature; Silicon compounds; Solid lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and Applications of Dielectric Materials, 1991., Proceedings of the 3rd International Conference on

Conference_Location

Tokyo

Print_ISBN

0-87942-568-7

Type

conf

DOI

10.1109/ICPADM.1991.172250

Filename

172250