Title :
On the mechanism of dielectric breakdown of ceramic for HV capacitors
Author :
Rongen, Wan ; Shoutian, Chen
Author_Institution :
Dept. of Electr. Eng., Xi´´an Jiaotong Univ., China
Abstract :
Dielectric breakdown tests were performed on specimens prepared from BaTiO3 material with additives (less than 10%) mainly of MgTiO3, CaZrO3, Bi2O3, and SnO2. The dielectric constant of the specimen is about 6500 and the Curie point temperature is about 20°C. The mechanism of dielectric breakdown is mainly thermal breakdown at T>T c, because breakdown stresses decrease with temperature. Breakdown occurs in the grain boundary layer at T>T c. It does not arise from thermal mechanisms or electrical mechanisms and relative to mechanical properties of low temperature and additives of specimens
Keywords :
barium compounds; ceramics; dielectric materials; electric breakdown of solids; insulating materials; insulation testing; power capacitors; 20 C; BaTiO3-MgTiO3-CaZrO3-Bi2O3-SnO2; Curie point temperature; HV capacitors; additives; breakdown stresses; dielectric breakdown; dielectric constant; electric breakdown mechanism; grain boundary layer; permittivity; thermal breakdown; Additives; Bismuth; Ceramics; Dielectric breakdown; Dielectric constant; Dielectric materials; Materials testing; Performance evaluation; Temperature; Thermal stresses;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1991., Proceedings of the 3rd International Conference on
Conference_Location :
Tokyo
Print_ISBN :
0-87942-568-7
DOI :
10.1109/ICPADM.1991.172257
