DocumentCode
2796775
Title
The reliability challenge: New materials in the new millennium. Moore´s Law drives a discontinuity
Author
England, Julie Spicer ; England, Robert W.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
1998
fDate
March 31 1998-April 2 1998
Firstpage
1
Lastpage
8
Abstract
Nowhere is the pace of change so rapid or so dramatic as in the semiconductor industry. For any industry to sustain 15% growth per year over a 40-year period is remarkable, but in the next few years, that growth rate is expected to accelerate, creating an industry that rivals historically dominant industries such as automotive and steel for a share of the global economy. Moore´s Law has proven remarkably successful in characterizing the growth of the semiconductor industry for the past three decades. During that period, the core microelectronic materials-silicon substrate, SiO/sub 2/-based dielectrics, and aluminum metallization-have undergone relatively minor perturbations. Now, however, a discontinuity in basic semiconductor materials will be necessary for the industry to continue on the curve described by Moore´s Law. The materials on which careers have been based are giving way to new gate and interlevel dielectrics, and copper metallization is replacing aluminum-alloy metallization. Given the size of our industry and its impact on the global economy, an accelerated understanding of the reliability physics of these new materials is essential. This paper deals with the work environment, skills and methods required for the reliability scientist to prepare the semiconductor industry for the new millennium.
Keywords
dielectric thin films; failure analysis; integrated circuit design; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; Al-SiO/sub 2/-Si; Cu-SiO/sub 2/-Si; IC materials; Moore´s Law; Si; SiO/sub 2/-based dielectrics; aluminum metallization; aluminum-alloy metallization; copper metallization; core microelectronic materials; gate dielectrics; global economy share; interlevel dielectrics; reliability; reliability physics; semiconductor industry; semiconductor industry growth rate; semiconductor materials; silicon substrate; work environment; Acceleration; Automotive engineering; Dielectric materials; Dielectric substrates; Electronics industry; Materials reliability; Metallization; Metals industry; Moore´s Law; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International
Conference_Location
Reno, NV, USA
Print_ISBN
0-7803-4400-6
Type
conf
DOI
10.1109/RELPHY.1998.670435
Filename
670435
Link To Document