Title :
Excess noise and currents as a predictor of reliability in PIN photodiodes
Author :
Kozlowski, D.A. ; Jones, B.K.
Author_Institution :
Dept. of Phys., Lancaster Univ., UK
Abstract :
A correlation has been found to exist between the total excess noise and the reliability of InGaAs/InP mesa PIN photodiodes on a batch to batch basis. The total excess noise is made up wholly or partially from 1/f, generation and recombination (g-r) and burst noise components. The 1/f noise component has been found to be proportional to the reverse bias voltage (Vd) squared and the g-r noise proportional to an extra excess current component (ΔI) squared. Observations were made of a burst type noise component but no quantitative measurements have been made
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; indium compounds; photodetectors; photodiodes; random noise; reliability; 1/f; InGaAs-InP; PIN photodiodes; burst noise; correlation; excess current; excess noise; mesa PIN photodiodes; random noise; recombination; reliability; reverse bias voltage;
Conference_Titel :
Optical Detectors, IEE Colloquium on
Conference_Location :
London
