Dephasing dynamics of coherent phonons in heavily doped Si under non-resonant photoexcitation

Author

Kato, K. ; Ishizawa, A. ; Oguri, K. ; Tateno, K. ; Tawara, T. ; Kitajima, M. ; Nakano, H.

Author_Institution

NTT Basic Res. Labs., NTT Corp., Atsugi, Japan

fYear

2009

fDate

14-19 June 2009

Firstpage

1

Lastpage

1

Abstract

Ultrashort laser pulses allow us to do the real-time observation of carrier and phonon dynamics. Under the resonant excitation, the strong coupling between carriers and coherent phonons in Si is observed in time-domain. By using photon below the direct band gap (-3.4 eV), Si is excited non-resonantly from the valence band and the conduction band p- and n-type Si, respectively. An opposite effect between p- and n-type doping on the dephasing dynamics of coherent phonons is observed.

Keywords

conduction bands; elemental semiconductors; energy gap; phonons; photoexcitation; reflectivity; semiconductor doping; silicon; time resolved spectra; valence bands; Si; carrier dynamics; coherent phonons; conduction band; dephasing dynamics; direct band gap; heavily doped Si; nonresonant photoexcitation; phonon dynamics; resonant excitation; time-resolved reflectivity; ultrashort laser pulses; valence band; Frequency; Laser excitation; Light scattering; Optical scattering; Oscillators; Phonons; Photonic band gap; Raman scattering; Reflectivity; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-4079-5

Electronic_ISBN

978-1-4244-4080-1

Type

conf

DOI

10.1109/CLEOE-EQEC.2009.5192661

Filename

5192661