DocumentCode
2797121
Title
GaSb-based mid-IR electrically-pumped VCSELs covering the wavelength range from 2.3 to 2.7 µm
Author
Ducanchez, A. ; Cerutti, L. ; Grech, P. ; Genty, F. ; Tournié, E.
Author_Institution
Inst. d´´Electron. du Sud (IES), Univ. Montpellier II, Montpellier, France
fYear
2009
fDate
14-19 June 2009
Firstpage
1
Lastpage
1
Abstract
GaSb based EP-VCSELs were fabricated. Room temperature lasing has been achieved from 2.3 mum up to 2.63 mum which is the longest wavelength VCSELs reported.
Keywords
III-V semiconductors; gallium compounds; surface emitting lasers; GaSb; mid-IR electrically-pumped VCSELs; room temperature lasing; wavelength 2.3 micron to 3.3 micron; Absorption; Diode lasers; Gas detectors; Interference; Mirrors; Pollution; Spectroscopy; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location
Munich
Print_ISBN
978-1-4244-4079-5
Electronic_ISBN
978-1-4244-4080-1
Type
conf
DOI
10.1109/CLEOE-EQEC.2009.5192675
Filename
5192675
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