• DocumentCode
    2797400
  • Title

    High aspect ratio nano-scale CFX structures fabricated by deep-rie

  • Author

    Arakawa, Takahiro ; Kusakawa, Hiroyuki ; Shoji, Shuichi

  • Author_Institution
    Waseda Univ., Tokyo
  • fYear
    2007
  • fDate
    21-25 Jan. 2007
  • Firstpage
    287
  • Lastpage
    290
  • Abstract
    High aspect ratio (>500) nano-scale CFx (fluorocarbon) "tube" and "test-tube" arrays were realized using Deep Reactive Ion Etching (RIE). Sidewall CFx nano structures of 200 nm in thickness formed during Deep RIE passivation process were used for the purpose. The film thickness of CFx was controlled from 200 nm to 500 nm, and the height more than 100 mum was available. As a result, the aspect ratio is larger than 500. This fluorocarbon tube and test-tube array are useful tools for chemical and biological applications.
  • Keywords
    nanotechnology; sputter etching; deep RIE passivation process; deep reactive ion etching; deep-RIE; fluorocarbon; high aspect ratio nanoscale CFx structures; sidewall CFx nanostructures; size 200 nm to 500 nm; test-tube arrays; Chemicals; Etching; Microchannel; Nanobioscience; Nanostructures; Passivation; Polymer films; Resists; Semiconductor films; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on
  • Conference_Location
    Hyogo
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-095-5
  • Electronic_ISBN
    1084-6999
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2007.4432970
  • Filename
    4432970
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2797400