Title :
Thin film preparation of silicon nanocrystals embedded in silicon oxide by sol-gel method
Author :
Kunchana, Kannika ; Fangsuwannarak, Thipwan
Author_Institution :
Inst. of Eng., Suranaree Univ. of Technol., Nakhon Ratchasima, Thailand
Abstract :
In this paper, nano silicon powders were prepared by grinding technique and subsequently mixed in sol-gel of Tetraethylorthosilicate and ethanol solution. The silicon dioxide films synthesized from sol-gel solution were preliminary studied in the term of optical property as refractive index (n) under varying aging and annealing conditions. We have also determined x-composition of gel-prepared SiOx films with varying annealing temperature by Fourier transform infrared spectroscopy measurement. The results show that the x-composition increases from 1.26 to 1.49 with a decrease in annealing temperature from 60 °C to 500 °C. The prepared films from precursor of nano-silicon powder suspension were characterized by photoemission spectroscopy, and Raman spectroscopy in order to obtain more understanding of chemical composition and silicon nano-crystallite quality, respectively. The Raman scattering spectra presented in this study suggest a size effect from occurring spectra broadening and frequency peak which shifts downward from 521 cm-1.
Keywords :
Fourier transform spectra; Raman spectra; ageing; annealing; elemental semiconductors; grinding; infrared spectra; nanocomposites; nanofabrication; photoelectron spectra; powder technology; refractive index; semiconductor thin films; silicon; silicon compounds; sol-gel processing; Fourier transform infrared spectroscopy; Raman scattering spectra; Raman spectroscopy; Si; SiO1.26; SiO1.49; aging conditions; annealing conditions; chemical composition; gel prepared SiOx films; grinding technique; nanosilicon powders; optical property; photoemission spectroscopy; refractive index; silicon dioxide films; silicon nanocrystallite quality; silicon oxide embedded silicon nanocrystal; sol-gel method; temperature 500 degC; temperature 60 degC; tetraethylorthosilicate-ethanol solution; thin film preparation; wave number 521 cm-1; Aging; Annealing; Films; Powders; Refractive index; Silicon; nanocrystals; silicon; silicon oxide; sol-gel; thin film;
Conference_Titel :
Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2012 9th International Conference on
Conference_Location :
Phetchaburi
Print_ISBN :
978-1-4673-2026-9
DOI :
10.1109/ECTICon.2012.6254295