High field electron transport and breakdown in amorphous and disordered solids

Author

Inuishi, Yoshio

Author_Institution

Osaka Univ., Japan

fYear

1991

fDate

8-12 Jul 1991

Firstpage

66

Abstract

Experimental results on high electric field electron transport and breakdown in amorphous or disordered solids are presented. It was found that the time-of-flight electron drift mobility in hydrogenated amorphous silicon (a-Si:H) films increased with increasing applied field. It was also found that the breakdown field in a-Si:H films and γ-ray irradiated KCl crystals had a negative temperature gradient in contrast to that in crystalline solids. These experimental results are consistently explained by taking account of the increase in electron temperature (hot electron) in the theory of dispersive transport in amorphous solids

Keywords

F-centres; amorphous semiconductors; carrier mobility; electric breakdown of solids; elemental semiconductors; gamma-ray effects; high field effects; hot carriers; hydrogen; potassium compounds; silicon; F-centre formation; KCl crystals; amorphous Si:H; amorphous solids; breakdown; disordered solids; dispersive transport; electron temperature; gamma irradiation; high electric field electron transport; hot electron; negative temperature gradient; time-of-flight electron drift mobility; Amorphous materials; Amorphous silicon; Crystallization; Dispersion; Electric breakdown; Electron mobility; Kirchhoff´s Law; Semiconductor films; Solids; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and Applications of Dielectric Materials, 1991., Proceedings of the 3rd International Conference on

Conference_Location

Tokyo

Print_ISBN

0-87942-568-7

Type

conf

DOI

10.1109/ICPADM.1991.172356

Filename

172356