Three dimensional dielectrophoretic assembly of singlewalled carbon nanotubes for integrated circuit interconnects

In this paper, we report a novel technological approach for three dimensional (3D) assembly of single-walled carbon nanotubes (SWNTs) using dielectrophoresis (DEP). The two terminal resistance of the assembled SWNTs is _~545 Ohms. Encapsulation of the 3D structure with a thin layer of parylene-C protects it from the environment and keeps it intact. This directed assembly procedure is versatile, inexpensive, and achieved at room temperature. By utilizing a self-aligned three mask process, we demonstrate a 3D assembly/encapsulation method utilizing conductive SWNTs as the metallization material, parylene-C as the inter-level dielectric and the encapsulation layer. This technology is also applicable for vertical assembly of other conductive nanostructures and will enable 3D research in nanotechnology.