DocumentCode
2797897
Title
High-frequency capacitive disk gyroscopes in (100) and (111) silicon
Author
Johari, Houri ; Ayazi, Farrokh
Author_Institution
Georgia Inst. of Technol., Atlanta
fYear
2007
fDate
21-25 Jan. 2007
Firstpage
47
Lastpage
50
Abstract
This paper reports on the design and implementation of capacitive bulk acoustic wave (BAW) disk gyroscopes in single crystal silicon. The capacitive BAW disk gyroscopes are stationary devices operating in their degenerative MHz- frequency bulk acoustic modes with very small vibration amplitudes (<20 nm). They can achieve very high quality factors (Q) in moderate vacuum and even under atmospheric pressure, which substantially simplifies their wafer-level packaging. In addition, their small operating voltages simplify the interface circuit design and implementation in standard CMOS.
Keywords
CMOS integrated circuits; bulk acoustic wave devices; elemental semiconductors; gyroscopes; silicon; wafer level packaging; CMOS integrated circuit; Si; acoustic modes; bulk acoustic wave; disk gyroscopes; high-frequency capacitive gyroscopes; single crystal silicon; wafer-level packaging; Acoustic devices; Acoustic waves; Atmospheric waves; Circuit synthesis; Frequency; Gyroscopes; Q factor; Silicon; Voltage; Wafer scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on
Conference_Location
Hyogo
ISSN
1084-6999
Print_ISBN
978-1-4244-095-5
Electronic_ISBN
1084-6999
Type
conf
DOI
10.1109/MEMSYS.2007.4433009
Filename
4433009
Link To Document