DocumentCode :
2797897
Title :
High-frequency capacitive disk gyroscopes in (100) and (111) silicon
Author :
Johari, Houri ; Ayazi, Farrokh
Author_Institution :
Georgia Inst. of Technol., Atlanta
fYear :
2007
fDate :
21-25 Jan. 2007
Firstpage :
47
Lastpage :
50
Abstract :
This paper reports on the design and implementation of capacitive bulk acoustic wave (BAW) disk gyroscopes in single crystal silicon. The capacitive BAW disk gyroscopes are stationary devices operating in their degenerative MHz- frequency bulk acoustic modes with very small vibration amplitudes (<20 nm). They can achieve very high quality factors (Q) in moderate vacuum and even under atmospheric pressure, which substantially simplifies their wafer-level packaging. In addition, their small operating voltages simplify the interface circuit design and implementation in standard CMOS.
Keywords :
CMOS integrated circuits; bulk acoustic wave devices; elemental semiconductors; gyroscopes; silicon; wafer level packaging; CMOS integrated circuit; Si; acoustic modes; bulk acoustic wave; disk gyroscopes; high-frequency capacitive gyroscopes; single crystal silicon; wafer-level packaging; Acoustic devices; Acoustic waves; Atmospheric waves; Circuit synthesis; Frequency; Gyroscopes; Q factor; Silicon; Voltage; Wafer scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on
Conference_Location :
Hyogo
ISSN :
1084-6999
Print_ISBN :
978-1-4244-095-5
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2007.4433009
Filename :
4433009
Link To Document :
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