• DocumentCode
    2797897
  • Title

    High-frequency capacitive disk gyroscopes in (100) and (111) silicon

  • Author

    Johari, Houri ; Ayazi, Farrokh

  • Author_Institution
    Georgia Inst. of Technol., Atlanta
  • fYear
    2007
  • fDate
    21-25 Jan. 2007
  • Firstpage
    47
  • Lastpage
    50
  • Abstract
    This paper reports on the design and implementation of capacitive bulk acoustic wave (BAW) disk gyroscopes in single crystal silicon. The capacitive BAW disk gyroscopes are stationary devices operating in their degenerative MHz- frequency bulk acoustic modes with very small vibration amplitudes (<20 nm). They can achieve very high quality factors (Q) in moderate vacuum and even under atmospheric pressure, which substantially simplifies their wafer-level packaging. In addition, their small operating voltages simplify the interface circuit design and implementation in standard CMOS.
  • Keywords
    CMOS integrated circuits; bulk acoustic wave devices; elemental semiconductors; gyroscopes; silicon; wafer level packaging; CMOS integrated circuit; Si; acoustic modes; bulk acoustic wave; disk gyroscopes; high-frequency capacitive gyroscopes; single crystal silicon; wafer-level packaging; Acoustic devices; Acoustic waves; Atmospheric waves; Circuit synthesis; Frequency; Gyroscopes; Q factor; Silicon; Voltage; Wafer scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on
  • Conference_Location
    Hyogo
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-095-5
  • Electronic_ISBN
    1084-6999
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2007.4433009
  • Filename
    4433009