Title :
Semiconductor optoelectronic materials
Author_Institution :
British Telecom Res., Ipswich, UK
Abstract :
The author reviews semiconductor materials for optoelectronic devices, with special emphasis on the use of III-V semiconductor materials such as gallium arsenide and indium phosphide for light emission, and the new possibilities emerging from the use of bandgap engineering concepts, especially multiquantum wells and superlattices
Keywords :
III-V semiconductors; energy gap; gallium arsenide; indium compounds; optical materials; reviews; semiconductor quantum wells; semiconductor superlattices; GaAs; III-V semiconductor; InP; bandgap engineering concepts; light emission; multiquantum wells; semiconductor optical materials; superlattices;
Conference_Titel :
Optoelectronic Materials, IEE Colloquium on
Conference_Location :
London
