Title :
A novel sacrificial layer technology based on highly selective etching of silicon-germanium in CLF3
Author :
Leinenbach, Christina ; Seidel, Helmut ; Fuchs, Tino ; Kronmueller, Silvia ; Laermer, Franz
Author_Institution :
Robert Bosch GmbH, Gerlingen
Abstract :
This paper introduces a new sacrificial layer and etching technology for the surface-micromachining of MEMS. Poly crystalline silicon-germanium (SiGe) is used as sacrificial material in combination with poly-Si as active functional layer. Applying a new plasmaless dry etching technique based on ClF3-gas, SiGe can be etched with an extremely high selectivity of up to 5000:1 with respect to silicon. This technique opens new opportunities for enhanced design freedom, increased underetching ranges and speed, and offers full compatibility to most dielectric and metal materials, and to monolithic integration with electronic circuitry on the same chip.
Keywords :
Ge-Si alloys; chlorine compounds; etching; micromachining; micromechanical devices; ClF3; MEMS; SiGe; dielectric material; dry etching technique; highly selective etching; metal material; monolithic electronic circuit integration; poly crystalline silicon-germanium; poly-silicon; sacrificial layer technology; surface-micromachining; Crystalline materials; Crystallization; Dielectric materials; Dry etching; Germanium silicon alloys; Inorganic materials; Micromechanical devices; Plasma applications; Plasma materials processing; Silicon germanium;
Conference_Titel :
Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on
Conference_Location :
Hyogo
Print_ISBN :
978-1-4244-095-5
Electronic_ISBN :
1084-6999
DOI :
10.1109/MEMSYS.2007.4433014
