Title :
Low voltage protection circuit for FeRAM macro
Author :
Kang, Hee-Bok ; Kye, Hun-Woo ; Kim, Duck-Ju ; Park, Je-Hoon ; Soo-Nam Jang ; Ryu, Ji-Hwan ; Chung, Jin-Yong
Author_Institution :
Hyundai Electron., Ichon, South Korea
Abstract :
A 256 Kb ITIC FeRAM with sol-gel SBT provides wide operation of supply voltages ranging from 2.7 V to 5.5 V without a word-line boost scheme, and is composed of a novel power-on/off protection circuit with synchronized operation method to /CE pulse during the unintentional power-on/off
Keywords :
ferroelectric storage; integrated memory circuits; low-power electronics; protection; random-access storage; 2.7 to 5.5 V; 256 Kbit; FeRAM macro; ITIC FeRAM; LV protection circuit; SrBi2Ta2O9; nonvolitile ferroelectric RAM; power-on/off protection circuit; sol-gel SBT; Capacitors; Ferroelectric films; Ferroelectric materials; Low voltage; Nonvolatile memory; Power supplies; Protection; Pulse circuits; Random access memory; Voltage control;
Conference_Titel :
ASICs, 2000. AP-ASIC 2000. Proceedings of the Second IEEE Asia Pacific Conference on
Conference_Location :
Cheju
Print_ISBN :
0-7803-6470-8
DOI :
10.1109/APASIC.2000.896982
