The correlation of highly accelerated Q/sub bd/ tests to TDDB life tests for ultra-thin gate oxides

Author

Chen, Yuan ; Suehle, John S. ; Shen, Chih-Chieh ; Bernstein, Joseph ; Messick, Cleston ; Chaparala, Prasad

Author_Institution

Center for Reliability Eng., Maryland Univ., College Park, MD, USA

fYear

1998

fDate

March 31 1998-April 2 1998

Firstpage

87

Lastpage

91

Abstract

A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant or ramped current injection breakdown tests. It is demonstrated that an accurate correlation of highly accelerated breakdown tests to long-term constant voltage TDDB tests can be obtained.

Keywords

dielectric thin films; electric breakdown; integrated circuit reliability; integrated circuit testing; life testing; Si; SiO/sub 2/-Si; TDDB acceleration parameters; TDDB life tests; constant voltage stress time-dependent dielectric breakdown; highly accelerated Q/sub bd/ tests; highly accelerated breakdown tests; highly accelerated charge-to-breakdown tests; highly accelerated constant current injection breakdown tests; long-term constant voltage TDDB tests; ramped current injection breakdown tests; ultra-thin gate oxides; Acceleration; Breakdown voltage; Design for quality; Dielectric breakdown; Electric breakdown; Equations; Life estimation; Life testing; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International

Conference_Location

Reno, NV, USA

Print_ISBN

0-7803-4400-6

Type

conf

DOI

10.1109/RELPHY.1998.670449

Filename

670449