DocumentCode
2798221
Title
633 nm CW operation of GaInP/AlGaInP laser-diodes
Author
Valster, A. ; Liedenbaum, C.T.H.F. ; v.d.Heijden, J.M.M. ; Finke, M.N. ; Severens, A.L.G. ; Boermans, M.J.B.
Author_Institution
Philips Research Laboratories
fYear
1990
fDate
9-14 Sept. 1990
Firstpage
28
Lastpage
29
Keywords
Epitaxial growth; Gallium arsenide; Gas lasers; III-V semiconductor materials; Laboratories; Optical recording; Quantum well devices; Quantum well lasers; Semiconductor lasers; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location
Davos, Switzerland
Type
conf
DOI
10.1109/ISLC.1990.764413
Filename
764413
Link To Document