SAW GaN/Si based resonators: Modeling and experimental validation

Author

Stefanescu, A. ; Muller, A. ; Konstantinidis, G. ; Buiculescu, V. ; Dinescu, Adrian ; Stavrinidis, A. ; Neculoiu, Dan ; Cismaru, A.

Author_Institution

IMT Bucharest, Bucharest, Romania

Volume

1

fYear

2012

fDate

15-17 Oct. 2012

Firstpage

193

Lastpage

196

Abstract

We report on new models developed for surface acoustic wave resonators (SAW) on GaN/Si substrate working on frequencies above 5 GHz. The devices are composed of interdigital transducers (IDT) with finger and interdigit spacings 200nm wide. Different examples of modeling these devices, from 1D equivalent circuit to 3D FEM model are presented. The simulations are validated with experimental results for one port SAW and for a two port resonator SAW devicse.

Keywords

III-V semiconductors; elemental semiconductors; equivalent circuits; finite element analysis; gallium compounds; silicon; surface acoustic wave resonators; wide band gap semiconductors; 1D equivalent circuit; 3D FEM model; GaN-Si; IDT; SAW based resonators; finger; interdigit spacings; interdigital transducers; one-port SAW device; size 200 nm; surface acoustic wave resonators; two-port resonator SAW device; Finite element methods; Gallium nitride; Integrated circuit modeling; Resonant frequency; Solid modeling; Surface acoustic wave devices; Surface acoustic waves; FEM modelling; GaN; Surface acoustic wave resonator (SAW);

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2012 International

Conference_Location

Sinaia

ISSN

1545-857X

Print_ISBN

978-1-4673-0737-6

Type

conf

DOI

10.1109/SMICND.2012.6400656

Filename

6400656