Title :
SAW GaN/Si based resonators: Modeling and experimental validation
Author :
Stefanescu, A. ; Muller, A. ; Konstantinidis, G. ; Buiculescu, V. ; Dinescu, Adrian ; Stavrinidis, A. ; Neculoiu, Dan ; Cismaru, A.
Author_Institution :
IMT Bucharest, Bucharest, Romania
Abstract :
We report on new models developed for surface acoustic wave resonators (SAW) on GaN/Si substrate working on frequencies above 5 GHz. The devices are composed of interdigital transducers (IDT) with finger and interdigit spacings 200nm wide. Different examples of modeling these devices, from 1D equivalent circuit to 3D FEM model are presented. The simulations are validated with experimental results for one port SAW and for a two port resonator SAW devicse.
Keywords :
III-V semiconductors; elemental semiconductors; equivalent circuits; finite element analysis; gallium compounds; silicon; surface acoustic wave resonators; wide band gap semiconductors; 1D equivalent circuit; 3D FEM model; GaN-Si; IDT; SAW based resonators; finger; interdigit spacings; interdigital transducers; one-port SAW device; size 200 nm; surface acoustic wave resonators; two-port resonator SAW device; Finite element methods; Gallium nitride; Integrated circuit modeling; Resonant frequency; Solid modeling; Surface acoustic wave devices; Surface acoustic waves; FEM modelling; GaN; Surface acoustic wave resonator (SAW);
Conference_Titel :
Semiconductor Conference (CAS), 2012 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4673-0737-6
DOI :
10.1109/SMICND.2012.6400656
