The Temperature Dependence of the Threshold Current for InGaAlP Visible Light Lasers
Author :
Ishikawa, M. ; Itaya, K. ; Shiozawa, H. ; Nitta, K. ; Okajima, M. ; Hatakoshi, G.
Author_Institution :
Toshiba Corporation
fYear :
1990
fDate :
9-14 Sept. 1990
Firstpage :
32
Lastpage :
33
Keywords :
Diode lasers; Electrons; Laser theory; Leakage current; Optical design; Optical materials; Research and development; Temperature dependence; Temperature distribution; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
