• DocumentCode
    2798264
  • Title

    Investigation of the temperature dependence of the threshold current density of GaInP/AlGaInP double heterostructure lasers

  • Author

    Hagen, S.H. ; Valster, A. ; Boermans, M.J.B. ; van der Heyden, J. ; Acket, G.

  • Author_Institution
    Philips Research Laboratories
  • fYear
    1990
  • fDate
    9-14 Sept. 1990
  • Firstpage
    34
  • Lastpage
    35
  • Keywords
    Diodes; Electrons; Epitaxial growth; Gallium arsenide; Laboratories; Laser theory; Photoluminescence; Substrates; Temperature dependence; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
  • Conference_Location
    Davos, Switzerland
  • Type

    conf

  • DOI
    10.1109/ISLC.1990.764416
  • Filename
    764416
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2798264