DocumentCode
2798317
Title
Radiation hard GaAs microwave integrated circuits design
Author
Gromov, D.V. ; Maltcev, P.P. ; Nikiforov, A.Y. ; Polevich, S.A. ; Startcev, S.A.
Author_Institution
Specialized Electron. Syst., Moscow, Russia
fYear
1997
fDate
15-19 Sep 1997
Firstpage
147
Lastpage
149
Abstract
The radiation hard microwave integrated circuits (MIC) design technique is presented. The approach is based on the microstrip lines optimization procedure taking into consideration MESFET S-parameters radiation variation. The technique efficiency is demonstrated for MIC amplifier
Keywords
III-V semiconductors; MESFET integrated circuits; S-parameters; gallium arsenide; integrated circuit design; microstrip circuits; microwave amplifiers; microwave integrated circuits; radiation hardening (electronics); GaAs; GaAs microwave integrated circuit; MESFET; MIC amplifier; S-parameters; microstrip line optimization; radiation hard design; Circuit topology; Degradation; Design optimization; Gallium arsenide; Impedance; MESFETs; Microstrip; Microwave integrated circuits; Scattering parameters; Structural engineering;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location
Cannes
Print_ISBN
0-7803-4071-X
Type
conf
DOI
10.1109/RADECS.1997.698873
Filename
698873
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