DocumentCode
2798325
Title
Semiconductor nanowire manipulation using optoelectronic tweezers
Author
Jamshidi, Azizollah ; Pauzauskie, P.J. ; Ohta, Aaron T. ; Hsan-Yin Hsu ; Peidong Yang ; Wu, Ming C.
Author_Institution
Univ. of California, Berkeley
fYear
2007
fDate
21-25 Jan. 2007
Firstpage
155
Lastpage
158
Abstract
We demonstrate, for the first time, the trapping and manipulation of individual Si nanowires by light-induced dielectrophoresis, or optoelectronic tweezers (OET). Trapping of single Si nanowires, with a diameter of 100 nm and length of 15 mum, is reported using OET with an optical power density of 100 W/cm2 . We show that OET can separate two adjacent Si nanowires and transport a single nanowire at a speed of 135 mum/s. Array patterns of Si nanowires have also been demonstrated.
Keywords
nanoelectronics; nanowires; optoelectronic devices; radiation pressure; silicon; OET; optoelectronic tweezers; semiconductor nanowire manipulation; silicon; Charge carrier processes; Dielectrophoresis; Electric fields; Electrodes; Indium tin oxide; Nonuniform electric fields; Optical sensors; Photoconducting materials; Photoconductivity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on
Conference_Location
Hyogo
ISSN
1084-6999
Print_ISBN
978-1-4244-095-5
Electronic_ISBN
1084-6999
Type
conf
DOI
10.1109/MEMSYS.2007.4433040
Filename
4433040
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