• DocumentCode
    2798328
  • Title

    High power CW operation of aluminium-free InGaAs/GaAs/InGaP strained layer single quantum well ridge waveguide lasers

  • Author

    Ijichi, T. ; Ohkubo, M. ; Matsumoto, N. ; Okamoto, H.

  • Author_Institution
    Furukawa Electric Corporation
  • fYear
    1990
  • fDate
    9-14 Sept. 1990
  • Firstpage
    44
  • Lastpage
    45
  • Keywords
    Chemical lasers; Etching; Gallium arsenide; Indium gallium arsenide; MOCVD; Power lasers; Quantum well lasers; Surface emitting lasers; Threshold current; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
  • Conference_Location
    Davos, Switzerland
  • Type

    conf

  • DOI
    10.1109/ISLC.1990.764420
  • Filename
    764420
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2798328