Title :
Annealing effects and optical properties of Si: SiO2 films prepared by radio frequency sputter
Author :
Tanaka, Kiyoshi ; Happo, N. ; Fujiwara, Masamichi
Author_Institution :
Hiroshima City Univ., Hiroshima, Japan
Abstract :
We fabricated Si: SiO2 films and assessed its optical characteristics using photoluminescence spectroscopy. The Si: SiO2 films were deposited by sputtering Si tablets (15 mm square) onto a SiO2 target (108 mm diameter). Using excitation by a He-Cd laser, photoluminescence was emitted from the films. The bluish color emission was seen by the naked eye at room temperature. Photoluminescence spectra, that were measured from 400 nm to 1100 nm, were wide and continuous with some peaks. After annealing, that emission of photoluminescence decreased and its color changed to red.
Keywords :
annealing; elemental semiconductors; photoluminescence; semiconductor thin films; silicon; silicon compounds; sputter deposition; He-Cd laser excitation; Si:SiO2; annealing; bluish color emission; optical properties; photoluminescence spectroscopy; radiofrequency sputter; size 108 mm; size 15 mm; temperature 293 K to 298 K; thin films; wavelength 400 nm to 1100 nm; Absorption; Annealing; Films; Measurement by laser beam; Photoluminescence; Silicon; Temperature measurement; FT-IR; Si: SiO2 films; photoluminescence; silicon;
Conference_Titel :
Semiconductor Conference (CAS), 2012 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4673-0737-6
DOI :
10.1109/SMICND.2012.6400663
