DocumentCode :
2798343
Title :
Performance enhancement of InGaAs/InP quantum well lasers by both tensile and compressive strain
Author :
Tanbun-Ek, T. ; Logan, R.A. ; Olsson, N.A. ; Temkin, H. ; Sergent, A.M. ; Wecht, K.W.
Author_Institution :
AT&T Bell Laboratories
fYear :
1990
fDate :
9-14 Sept. 1990
Firstpage :
46
Lastpage :
47
Keywords :
Epitaxial layers; Gratings; Indium gallium arsenide; Indium phosphide; Laser modes; Power generation; Power lasers; Quantum well devices; Quantum well lasers; Tensile strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location :
Davos, Switzerland
Type :
conf
DOI :
10.1109/ISLC.1990.764421
Filename :
764421
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2798343
