Title :
Electric currents induced by twisted light in bulk semiconductors
Author :
Quinteiro, G.F. ; Tamborenea, P.I.
Author_Institution :
Dept. de Fis. J. J. Giambiagi, Univ. de Buenos Aires, Ciudad de Buenos Aires, Argentina
Abstract :
The paper presents an analysis of the interaction of twisted light (TL) with a bulk semiconductor and predict that the light induces, to first order, an electric current having no analog in the motion of atoms subject to TL. Semiconductors are optically excited by promoting the electrons from the valence to the conduction band. The analysis is restricted to optical excitations that couple electron wave-numbers near k = 0, a typical situation in semiconductor optics.
Keywords :
OBIC; laser beam effects; semiconductor materials; bulk semiconductors; electric currents; electron wave-numbers; optical excitations; semiconductor optics; twisted light; Atom optics; Current; Electron optics; Ion beams; Laboratories; Laser beams; Laser theory; Optical films; Physics; Solid state circuits;
Conference_Titel :
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-4079-5
Electronic_ISBN :
978-1-4244-4080-1
DOI :
10.1109/CLEOE-EQEC.2009.5192760
