p-NiO/ITO transparent heterojunction — Preparation and characterization

The paper presents the preparation of a transparent heterojunction on glass substrate consisting of p type NiO and n type ITO transparent oxidic semiconductors. NiO layer as a p type semiconductor and transparent layer was obtained by thermal oxidation at 430 ^oC of 50 nm metallic Ni films deposited by DC sputtering. Spectrophotometrical measurements used to investigate optical properties revealed a transmittance higher than 70% for NiO and 90% for ITO in the spectral range of 300-900 nm. The obtained p-NiO/n-ITO heterojunction exposed to ultraviolet radiation (λ ~ 240 nm) shows a good sensibility due to wide band gap of the layers.