Effects of electron irradiation on photoluminescence from 1-eV GaInNAs epilayers subject to thermal annealing

Author

Pavelescu, E. ; Kudrawiec, R. ; Baltateanu, N. ; Spanulescu, S. ; Guina, M.

Author_Institution

Nat. Inst. for R&D in Microtechnologies, Bucharest, Romania

Volume

1

fYear

2012

fDate

15-17 Oct. 2012

Firstpage

127

Lastpage

130

Abstract

We have investigated the influence of 7-MeV electron irradiation to the dose of 1.8×10¹⁶ cm^-2 and subsequent rapid thermal annealing on luminescence performance of lattice-matched 1-eV GaInNAs-on-GaAs epilayers, grown by molecular beam epitaxy. The study has been done by means of 9-K photoluminescence (PL) in conjunction with 300-K photoreflectance (PR) spectroscopy and x-ray diffraction measurements. A drastic deterioration in PL has been seen upon the electron irradiation. When rapid thermally annealed at 800 ^oC for 1 min an enhancement in PL has been observed as compared to the reference non-irradiated sample. The irradiation-promoted enhancement in PL upon annealing has been accompanied by a small additional blue shift (BS) of the PL. This additional annealing-induced BS has been found to be mainly due to an irradiation-promoted enhancement in In-N bonds formation.

Keywords

III-V semiconductors; X-ray diffraction; bonds (chemical); electron beam effects; gallium compounds; indium compounds; molecular beam epitaxial growth; nitrogen compounds; photoluminescence; photoreflectance; rapid thermal annealing; semiconductor epitaxial layers; spectral line shift; wide band gap semiconductors; GaAs; GaInNAs; X-ray diffraction; blue shift; bonds; electron irradiation; electron volt energy 1 eV; electron volt energy 7 MeV; lattice-matched epilayers; luminescence property; molecular beam epitaxy; photoluminescence; photoreflectance spectroscopy; rapid thermal annealing; temperature 300 K; temperature 800 degC; temperature 9 K; time 1 min; Gallium arsenide; Luminescence; Metals; Nitrogen; Radiation effects; Rapid thermal annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2012 International

Conference_Location

Sinaia

ISSN

1545-857X

Print_ISBN

978-1-4673-0737-6

Type

conf

DOI

10.1109/SMICND.2012.6400677

Filename

6400677