Title :
A 5.8-GHz 1-V low-noise amplifier in SiGe bipolar technology
Author :
Soyuer, M. ; Plouchart, J.-O. ; Ainspan, H. ; Burghartz, J.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A 5.8-GHz monolithic low-noise amplifier (LNA) with a minimum noise figure of 1.65 dB and an associated gain of 15 dB is implemented in a standard SiGe bipolar technology. It dissipates 13 mW from a 1-V supply (with only 9 mW in the gain stages). The measured transducer gain is 13 dB with a noise figure of 2.1 dB at 5.8 GHz. This is believed to be the lowest noise figure reported for a 5.8-GHz LNA in any production-level technology. The transducer gain is above 10 dB from 3.8 to 8 GHz. At 5.8 GHz, the input return loss and reverse isolation are 6 and 28 dB, respectively.
Keywords :
Ge-Si alloys; MMIC amplifiers; bipolar MMIC; heterojunction bipolar transistors; integrated circuit design; integrated circuit measurement; semiconductor materials; 1 V; 1.65 dB; 13 dB; 13 mW; 15 dB; 2.1 dB; 3.8 to 8 GHz; 5.8 GHz; 6 dB; HBTs; MMIC amplifiers; SiGe; bipolar technology; input return loss; low-noise amplifier; production-level technology; reverse isolation; transducer gain; Circuits; Gain; Gallium arsenide; Germanium silicon alloys; Low-noise amplifiers; MIM capacitors; Noise figure; Silicon germanium; Transducers; Wireless sensor networks;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-4063-9
DOI :
10.1109/RFIC.1997.598733
