Simulation of the ionizing radiation effects induced on an ideal NPN vertical BIMOS transistor

This paper is related to the study of the ionizing radiation effects induced on an ideal NPN vertical BIMOS transistor. The electrical performances of the vertical BIMOS transistor have already been analysed through simulation, theoretical study and confirmed by an experimental prototype. Thus it is of interest to simulate ionizing radiation effects by introducing ΔQ_ox, and ΔD_it. Moreover, through electrical characterization we can separate the two types of defect, ΔQ_ox, and ΔD_it to understand their different effects on device performance and support process qualification